A 0.6-22-GHz broadband CMOS distributed amplifier

Abstract

A CMOS distributed amplifier (DA) covering 0.6 to 22 GHz is presented in this paper. Cascode gain cells and m-derived matching sections are used to enhance the gain and bandwidth performance. The DA chip achieves measured gain of 7.3 /spl plusmn/ 0.8 dB with chip area of 0.9 /spl times/ 1.5 mm/sup 2/ including testing pads. The amplifier was fabricated in a standard 0.18-/spl mu/m CMOS technology and demonstrated the highest frequency and bandwidth of operation among previously reported amplifiers using regular CMOS processes to date.