Effect of the Silver Mirror Location on the Luminance Intensity of Double-Roughened GaN Light-Emitting Diodes

Abstract

Three kinds of GaN light-emitting diodes (LEDs) were used to investigate the effect of the silver (Ag) mirror location on the performance of LEDs. Samples designated as "PR-LED" were LEDs with roughened surface. "DRM-LED" and "DRSM-LED" were LEDs with double-roughened ( and undoped-GaN) surfaces and a Ag mirror system either at the undoped-GaN/sapphire interface or on the back side of sapphire substrate. It was found that the light intensity of DRM-LED was , which was 3.05 times higher than that of the PR-LED, and 1.45 times higher than that of the DRSM-LED.