III-nitride blue microdisplays

Abstract

Prototype blue microdisplays have been fabricated from InGaN/GaN quantum wells. The device has a dimension of 0.5×0.5 mm2 and consists of 10×10 pixels 12 μm in diameter. Emission properties such as electroluminescence spectra, output power versus forward current (L–I) characteristic, viewing angle, and uniformity have been measured. Due to the unique properties of III-nitride wide-band-gap semiconductors, microdisplays fabricated from III nitrides can potentially provide unsurpassed performance, including high-brightness/resolution/contrast, high-temperature/high-power operation, high shock resistance, wide viewing angles, full-color spectrum capability, long life, high speed, and low-power consumption, thus providing an enhancement and benefit to the present capabilities of miniature display systems.