Waveguide-Integrated Ge p-i-n Photodetectors on SOI Platform - Concepedia

Concepedia

Abstract

We demonstrate a fully CMOS processed Ge p-i-n photodetector integrated with a Si waveguide on a SOI platform with a high responsivity of 1.0 A/W at lambda=1520 nm, and a 3 dB bandwidth of >4.5 GHz measured at lambda=1550 nm

References

	Year	Citations
Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates Lorenzo Colace, G. Masini, Gaetano Assanto, Applied Physics Letters EngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorSemiconductors	2000	232
High performance germanium-on-silicon detectors for optical communications Silvia Famà, Lorenzo Colace, G. Masini, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On Insulator	2002	166
High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation Olufemi Dosunmu, D.D. Can, M.K. Emsley, IEEE Photonics Technology Letters High-speed Resonant CavityPhotonicsElectrical EngineeringPhotonic DeviceEngineering	2004	137

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