IEEE Electron Device Letters · 1983 · 33 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsIntegrated Circuit DesignIntegrated Circuit DevicesIntegrated Circuit FabricationPhotodetectorsPhotonic Integrated CircuitsSemiconductor DetectorsAvalanche PhotodiodesHeterojunction PhotodetectorsIntegrated PhotodetectorsMetal-organic Chemical Vapor DepositionMetalorganic Chemical Vapor DepositionMonolithic ArchitectureP-i-n PhotodetectorsPhotodiodes
An AlGaAs/GaAs p-i-n photodiode and a GaAs FET have been monolithically integrated on a GaAs substrate by using the metal-organic chemical vapor deposition (MOCVD) technique and by applying a new interconnection technique. A current amplification characteristic consistent to the device parameters has been demonstrated. This result indicates a suitability of MOCVD to realize the monolithic integration of p-i-n/FET photoreceiver.
6