A 3 $\mu$W CMOS True Random Number Generator With Adaptive Floating-Gate Offset Cancellation

Jeremy Holleman, Seth Bridges, Brian Otis, C. Diorio

IEEE Journal of Solid-State Circuits · 2008 · 62 citations · 21 references

Concepts

Abstract

This paper presents two novel hardware random number generators (RNGs) based on latch metastability. We designed the first, the DC-nulling RNG, for extremely low power operation. The second, the FIR-based RNG, uses a predictive whitening filter to remove nonrandom components from the generated bit sequence. In both designs, the use of floating-gate memory cells allows us to predict and compensate for DC offsets and other nonrandom influences while minimizing power consumption. We also present an efficient digital post-processing technique for improving randomness. We fabricated both RNGs in a standard 0.35 mum CMOS process. The DC-nulling RNG occupied .031 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> of die area, while the FIR-based RNG occupied 1.49 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .

References

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