IEEE Electron Device Letters · 1983 · 43 citations · 1 references
EngineeringElectrical EngineeringHeat TransferMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingHeat Transfer ModelingPower DissipationThermal ManagementThermal Properties Of SemiconductorsHeat Diffusion EquationHeat EquationMetal-oxide-semiconductor Field-effect Transistor ModelingSaturationSaturation RegionTemperature Distribution AnalysisTemperature Distribution ModelingThermal Effects
The temperature distribution in a MOS transistor caused by power dissipation within the device has been calculated by solving the heat diffusion equation. Using this temperature distribution, IV characteristics of a MOS device as modified by thermal effects are calculated. The predicted behavior matches reported experimental observations; in particular, the negative dynamic resistance seen in the saturation region of devices operating at elevated power densities.
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