Temperature dependence of the fast, near-band-edge scintillation from CuI, HgI2, PbI2, ZnO:Ga and CdS:In

Temperature quenching of photoluminescence intensities in undoped and doped GaN

M. Leroux, N. Grandjean, B. Beaumont et al. · Journal of Applied Physics · 1999 · 511 citations · Full text

Engineering, Materials Engineering, Materials Science +14

Room-temperature compound semiconductor radiation detectors

Douglas S. McGregor, H. Hermon · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 1997 · 245 citations

Engineering, Electrical Engineering, Materials Science +12

Mechanisms of band-edge emission in Mg-doped <i>p</i>-type GaN

M. Smith, G. D. Chen, J. Y. Lin et al. · Applied Physics Letters · 1996 · 130 citations

Engineering, Materials Engineering, Materials Science +17

Measurements of the intrinsic rise times of common inorganic scintillators

Stephen E. Derenzo, William J. Weber, W.W. Moses et al. · IEEE Transactions on Nuclear Science · 2000 · 115 citations

Engineering, Materials Science, Electronic Materials +13

Edge emission of n-type conducting ZnO and CdS

W. Lehmann · Solid-State Electronics · 1966 · 92 citations

Engineering, Materials Engineering, Materials Science +14