Concepedia

Publication | Closed Access

Laser lift‐off of AlN/sapphire for UV light‐emitting diodes

DOI

43

Citations

0

References

2012

Year

Hiroki Aoshima, Kenichiro Takeda, Kosuke Takehara, Shun Ito, Mikiko Mori, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Abstract

Abstract We report on laser lift‐off (LLO) of AlN/sapphire for UV light‐emitting diodes (LEDs). Underfill between chip and submount is a key factor for the successful LLO of AlN/sapphire. We fabricated thin‐film‐flip‐chip UV LEDs with a peak wavelength of 343 nm using the LLO. Moreover surface texturing was carried out on the exfoliated AlN surface. The light output power from the UV LED after the LLO and the surface texture at exfoliated surface is 1.7 times higher than that before the LLO at 20 mA (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)