Europhysics Letters (EPL) · 2012 · 16 citations · 21 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationHigh-frequency Semiconductor DevicesMicrowave OscillatorsOscillatorsTerahertz PhotonicsTerahertz SpectroscopyDiode-based OscillatorsHigh-frequency ElectronicsResonant TunnelingResonant Tunneling DevicesTerahertz Oscillators
We present resonant-tunnelling-diode (RTD) oscillators, which are operating at frequencies up to 564 GHz. Due to heavy doping of the collector side of our diodes, the oscillators are operating beyond the tunnel-lifetime (τ) and relaxation-time (τrel) limits of RTDs. At 564 GHz we achieve ωτ≈1.2 and ωτrel≈2.6, the highest previously reported value of ωτ at frequencies >150 GHz was ≈0.6. Our study indicates that operating frequencies of RTD oscillators could be significantly increased and RTDs should be capable of operating at frequencies of several THz.
21
Tunneling in a finite superlattice
Raphael Tsu, L. Esaki · Applied Physics Letters · 1973 · 2.4K citations
Resonant tunneling in semiconductor double barriers
L. L. Chang, L. Esaki, Raphael Tsu · Applied Physics Letters · 1974 · 1.9K citations
Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes
E. R. Brown, J. R. Söderström, C. D. Parker et al. · Applied Physics Letters · 1991 · 796 citations
Engineering, Electrical Engineering, Electronic Materials +16