Electronics Letters · 2001 · 111 citations · 14 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsElectronic Band StructureIii-v SemiconductorsQuantum WellsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBandgap EngineeringDegenerate StatesGallium NitrideInorganic SemiconductorsQuantum Well Band StructureQuantum Well HeterostructuresQuantum Well PhotodetectorsQuantum Well Structures
An entanglement-preserving photodetector converts photon polarisation to electron spin. Up and down spin must respond equally to oppositely polarised photons, creating a requirement for degenerate spin energies, ge ≃ 0, for electrons. The authors present a plot of ge factor against lattice constant, analogous to bandgap against lattice constant, that can be used for g factor engineering of III-V alloys and quantum wells.
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