Electronics Letters · 1983 · 17 citations · 2 references
EngineeringElectrical EngineeringOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesLaser Material ProcessingLaser OpticsLaser PhysicsOptical SourcesSemiconductor LasersDistributed Feedback LasersIntegrated LasersLaser ThresholdLasersLow-threshold Current LasersSemiconductor Laser DiodesSemiconductor Laser FabricationThreshold Current Reduction
Low-threshold-current (85 mA), oxide isolated InGaAsP/InP distributed feedback (DFB) lasers operating at a wavelength of λ = 1.5 μm have been produced for the first time using electron-beam-written DFB corrugations overgrown by MOCVD. The control and flexibility afforded by these techniques considerably ease the complexity of DFB laser manufacture.
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