IEEE Transactions on Applied Superconductivity · 1993 · 42 citations · 5 references
EngineeringComputer EngineeringElectrical EngineeringComputer ArchitectureMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignMemory DevicesMemory Subsystem DesignSuperconducting MaterialsCurrent SensingCurrent Sensing CircuitsLow-temperature SuperconductorsLow-voltage Cmos DesignMemory Circuit DesignMemory CircuitsSensor Interface Circuits
The authors describe new types of hybrid superconductor-semiconductor RAMs which utilize the current switches in superconductive electronics to remove important constraints on the design of semiconductor memories and achieve performances attainable by the individual technologies separately. They focus on a voltage word line RAM architecture and illustrate the basic designs in terms of a low-T/sub c/ Josephson-CMOS technology. They discuss the design of interface circuits, word-line drivers, memory cells, and fluxoelectronic current sensing of bit lines. Current projections for 4 K operation indicate that sub-nanosecond 64-kb RAMs using a 0.8- mu m CMOS technology are possible. Extensions of this design to high-T/sub c/ superconductor-CMOS circuits operating at 77 K are briefly discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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A Josephson driver to interface Josephson junctions to semiconductor transistors
Hideo Suzuki, A. Inoue, T. Imamura et al. · 2003 · 73 citations
Y. Wada · Proceedings of the IEEE · 1989 · 34 citations
Engineering, Computer Engineering, Electrical Engineering +16
High-speed sensing techniques for ultrahigh-speed SRAMs
H. Nambu, K. Kanetani, Y. Idei et al. · IEEE Journal of Solid-State Circuits · 1992 · 16 citations
Engineering, Computer Engineering, Electrical Engineering +10