2010 · 78 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesMemory DevicesMemristive MaterialsSoft-switching TechniquesEnduranceEndurance CharacteristicsEnergy-efficient Memory DesignLow-power Memory CircuitsMemory MaterialsNon-volatile Memory DesignPower-efficient Memory DesignUltra-low-power Cmos
We report high performance RRAM of ultra-low 4 μW set power (-3.5 μA at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> at 85°C, good 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> cycling endurance and fast 50 ns switching for the first time. These were achieved using novel covalent-bond-dielectric/metal-oxide and low cost electrodes.
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Picosecond photoresponse of carriers in Si ion-implanted Si
Albert Chin, K. Y. Lee, Bo-Rong Lin et al. · Applied Physics Letters · 1996 · 72 citations