IEEE Electron Device Letters · 2011 · 54 citations · 10 references
Non-volatile MemoryEngineeringEmerging Memory TechnologyPhase Change MemoryElectronic DevicesNanoelectronicsMaterials ScienceElectrical EngineeringNanotechnologyElectronic MemoryMicroelectronicsPower ConsumptionDiamond-like CarbonElectronic MaterialsNanomaterialsApplied PhysicsGrapheneSemiconductor MemoryResistance SwitchingNanoscale Diamondlike Carbon
Resistance random access memory devices based on nanoscale diamondlike carbon (DLC) films are demonstrated. The devices exhibit excellent memory performances such as high on/off-resistance ratio (>; 300), high switching speed ( <; 50 ns), low operation voltage ( <; 1.2 V), low switching power consumption ( <; 16 μW), nondestructive readout, and good reliability. Nanoscale graphitic filament formation and rupture alternately through the field-induced dielectric breakdown and thermal fuse effect, respectively, are proposed to be responsible for the resistance switching. The unipolar switching characteristics shown here suggest that DLC is one of the most promising material candidates for high-density and low-power nonvolatile memory applications.
10
Nonvolatile resistive switching memory based on amorphous carbon
Fei Zhuge, Wei Dai, Congli He et al. · Applied Physics Letters · 2010 · 146 citations
Materials Science, Non-volatile Memory, Electrical Engineering +15