Electron Mobility Model for $\langle \hbox{110} \rangle$ Stressed Silicon Including Strain-Dependent Mass

Abstract

Stress-induced enhancement of electron mobility has primarily been attributed to the splitting of the conduction band minima. However, experiments have indicated that the mobility enhancement cannot solely be attributed to this effect, and a recent study has shown that stress along the lang110rang direction leads to a change of the effective mass. This work investigates the effect of the variation of the effective mass with stress along the lang110rang direction on the electron mobility. An improved low-field mobility model incorporating the effective mass change is presented