IEEE Journal of Solid-State Circuits · 1990 · 16 citations · 13 references
EngineeringElectrical EngineeringMicroelectronicsOptoelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMillimeter-wave CommunicationsSemiconductor PhysicsWide Band Gap SemiconductorsCircuit ConfigurationHeterojunction Bipolar TransistorsHeterostructure DevicesOptical Wireless CommunicationOvershootPhase MarginPopulation OvershootSemiconductor Optical Amplifiers
Circuit technology that achieves a high-bit-rate decision circuit with high input sensitivity for application to future optical communication systems by using AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is reviewed. This technology includes a highly accurate transistor model expressing the overshoot effect and a novel circuit configuration with a wideband preamplifier and an internal buffer. The decision IC operates at up to 12 Gb/s, using AlGaAs/GaAs HBTs with f/sub T/ of 40 GHz. A good sensitivity of 71 mV/sub p-p/ and a wide phase margin of 217 degrees at 11 Gb/s is also achieved under error-free conditions (less than 10/sup -9/ errors).< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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