IEEE Transactions on Electron Devices · 1980 · 39 citations · 2 references
EngineeringElectrical EngineeringDesign OptimizationMicroelectronicsSemiconductor DevicesCmos Circuit DesignDevice ModelingIntegrated Circuit DesignWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsDevice OptimizationParasitic Element ModelingParasitic ElementsPower Electronics DevicesPower MosfetsTopology Optimization Criteria
Design and experimental realization of a 450-V, 0.75-Ω DMOS power transistor are discussed. Optimization criteria are evaluated for the control of parasitic elements of the planar diffused design.
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