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GaInAs junction FET fully dry etched by metal organic reactive ion etching technique
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1987
Year
Materials ScienceMaterials EngineeringElectrical EngineeringEtching TechniqueEngineeringElectron-beam LithographyLow Surface DamageMicrofabricationNanoelectronicsElectronic EngineeringSurface ScienceApplied PhysicsSemiconductor Device FabricationPlasma EtchingMicroelectronicsGainas Junction FetOptoelectronicsSemiconductor Device
The metal organic reactive ion etching technique, which uses a mixture of methane, hydrogen and argon, has been applied for the first time to the fabrication of a device. This etching technique is used to define the gate of a GaInAs junction FET. Results shows that it permits good control of etching depth with low surface damage.