IEEE Journal of Solid-State Circuits · 2001 · 104 citations · 11 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyDevice ModelingIntegrated Circuit DesignSemiconductor PhysicsThermal Properties Of SemiconductorsHot Carrier EffectsHot Carrier InjectionMosfet NoiseNoise Analysis In Integrated CircuitsNoise In Field-effect TransistorsNoise In Metal-oxide-semiconductor Field-effect TransistorsThermal NoiseThermal Noise Analysis
In this paper, we present a simple analytical model for the thermal channel noise of deep-submicron MOS transistors including hot carrier effects. The model is verified by measurements and implemented in the standard BSIM3v3 SPICE model. We show that the consideration of this additional noise caused by hot carrier effects is essential for the correct simulation of the noise performance of a low noise amplifier in the gigahertz range.
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