Thermal noise modeling for short-channel MOSFETs

Abstract

An analytical formulation of the thermal noise in short-channel MOSFETs, working in the saturation region, is presented. For the noise calculation, we took into account effects like the field dependent noise temperature and mobility, the device geometry and the channel length modulation, the back gate effect and the velocity saturation. The derived data from the model are in good agreement with reported thermal noise measurements, regarding the noise bias dependence, for transistors with channel lengths shorter than 1 /spl mu/m. Since the present thermal noise models of MOS transistors are valid for channel lengths well above 1 /spl mu/m, the proposed model can be easily incorporated in circuit simulators like SPICE, providing an extension to the analytical thermal noise modeling suitable for submicron MOSFETs.