Japanese Journal of Applied Physics · 1985 · 33 citations · 7 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsAmorphous SemiconductorsIon ImplantationSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesAmorphous SiliconHydrogenated Amorphous SiliconIon Implantation EffectsLow-energy Ion ImplantationSchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky Barrier DiodesSchottky Barriers
Low-energy (0.4 keV), high-dose (∼10 18 cm -2 ) H + implantation into n-type and p-type Si previously implanted with Ar has resulted in unusual modification of the Si surface barrier. The complex interaction of these ions in Si has resulted in Al/p-Si Schottky diodes with an effective barrier height of 0.83 eV, the highest reported value for any metal/p-Si contact. The corresponding complementary influence of atomic hydrogen on n-Si is not seen, suggesting specific interactions between H and the dopant or the formation of a surface layer of hydrogenated amorphous silicon.
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Hydrogen localization near boron in silicon
J. I. Pánkové, P. J. Zanzucchi, C. W. Magee et al. · Applied Physics Letters · 1985 · 290 citations
Natural Sciences, Chemistry, Physics +17