Silicon-on-sapphire MOSFET distributed amplifier with coplanar waveguide matching

P.F. Chen, Rob Johnson, M. Wetzel, P.R. de la Houssaye, G.A. Garcia, P.M. Asbeck, I. Lagnado

2002 · 11 citations · 2 references

Concepts

Abstract

Analog applications of silicon RF MOSFET circuits have received increased attention as potentially lower cost and higher integration alternatives to III-V technology. In this work, a thin-film silicon-on-sapphire (SOS) n-MOSEET based distributed amplifier is demonstrated. Impedance matching was achieved by a coplanar waveguide (CPW) on sapphire. The distributed amplifier has a bandwidth of 10 GHz and 5 dB gain. The amplifier's bandwidth is the broadest ever reported for a Si MOSFET technology.

References

2