P.R. de la Houssaye

Advanced thin-film silicon-on-sapphire technology: microwave circuit applications

Rob Johnson, P.R. de la Houssaye, C.E. Chang et al. · IEEE Transactions on Electron Devices · 1998 · 87 citations

Electrical Engineering, Engineering, Rf Semiconductor +15

Microwave performance of optically fabricated T-gate thin film silicon-on-sapphire based MOSFET's

P.R. de la Houssaye, C.E. Chang, Bruce W. Offord et al. · IEEE Electron Device Letters · 1995 · 34 citations

Semiconductor Technology, Electrical Engineering, Engineering +12

SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f/sub max/

Steven J. Koester, R. Hammond, J. O. Chu et al. · IEEE Electron Device Letters · 2001 · 30 citations

Semiconductor Technology, Electrical Engineering, Engineering +12

A 26.5 GHz silicon MOSFET 2:1 dynamic frequency divider

M. Wetzel, L. Shi, K.A. Jenkins et al. · IEEE Microwave and Guided Wave Letters · 2000 · 30 citations

Dynamic Divider, Electrical Engineering, Dynamic Frequency Divider +9

Electron saturation velocity variation in InGaAs and GaAs channel MODFETs for gate length to 550 AA

P.R. de la Houssaye, David R. Allee, Y.C. Pao et al. · IEEE Electron Device Letters · 1988 · 27 citations

Semiconductor Technology, Electrical Engineering, Gate Length +10