1D thickness scaling study of phase change material (Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf>) using a pseudo 3-terminal device

Abstract

1D thickness scaling study on a-GST has been successfully demonstrated without the help of ultra-fine lithography. V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> linearly scales down to ∼0.65 V at 6 nm scale, showing that stable read operation is possible at elevated temperature (70 °C). Reset R drift shows no dependency on the a-GST thickness up to 6 nm regime. Thin a-GST shows enhanced thermal stability compared to thick a-GST.