Fabrication and performance of submicron silicon MESFET

Abstract

Micron and submicron gate length silicon MESFET devices and circuits have been successfully fabricated using electron beam direct slice writing and a newly developed high density structure which self-aligns the active channel, source-drain, and contacts to the field oxide. Device characteristics of 1/4, 3/4, and 1 micron gate lengths show good square law behavior. In addition, measurements of 15-stage enhancement logic ring oscillators with 1 micron gate lengths show switching speeds of 1 to 2 nanoseconds with speed-power products of 1 to 5 femto Joules.