NAND Flash reliability degradation induced by HCI in boosted channel potential

Abstract

In this paper, we present the impact of hot carrier injection (HCI) during programming operation in NAND Flash, and describe how HCI degrades reliability characteristics. In order to understand reliability degradation induced by HCI, we evaluated the reliability characteristics under various stress conditions including the number of disturbance pulses, pulse shapes and temperatures. We have concluded that the programming pulse and boosting bias should be carefully optimized to reduce the impact of HCI.