IEEE Electron Device Letters · 1982 · 28 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesIon ImplantationRadiation Damage In MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBeam DamageIon Beam CleaningIon Irradiation DamageJunction BreakdownRadiation Damage EffectsRadiation EffectsSchottky Barrier CharacteristicsSchottky Barrier Diodes
It is shown that ion-beam damage effects in GaAs are significant, even for low energy ion cleaning (≃ 100 eV). Damage from this process results in increasing the saturation current (extrapolated from the forward current) of Au-n-GaAs Schottky barrier diodes by two orders of magnitude. The depth of damage during this process is shown to be unexpectedly large (900 Å) for these low ion-beam energies.
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