Reactive ion etching of Fe-Si-Al alloy for thin film head

Abstract

Elevated-temperature reactive ion etching (ET-RIE) in CCI/sub 4/ containing a gas plasma was investigated on Fe-Si-Al alloy by using an infrared lamp. A high etching rate, 200 nm/min, is obtained at 378 degrees C. Etching residues containing chloride are easily removed by an after-treatment process. Applying this ET-RIE to Fe-Si-Al alloy, a 1.7 mu m*3 mu m cross section pattern is achieved. No permeability deterioration is detected after ET-RIE. The ET-RIE method is very promising for patterning Fe-based alloy as thin-film head pole material.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>