Silicon technology tradeoffs for radio-frequency/mixed-signal "systems-on-a-chip"

Abstract

Silicon technology has progressed over the last several years from a digitally oriented technology to one well suited for microwave and RF applications at a high level of integration. Technology scaling, both at the transistor and back-end metallization level, has driven this progress. CMOS technology is ideally suited for low-noise amplification and receiver applications, but the fundamental breakdown voltage is lower than that of equivalent Si/SiGe HBTs. High-quality passive devices are equally important, and improvements in metallization technology are resulting in higher quality inductors. This paper summarizes the silicon technology issues associated with RF "system-on-a-chip" applications.