EXTIGATE: The ultimate process architecture for submicron CMOS technologies

Abstract

In this work, we present the novel process architecture EXTIGATE (EXtended Trench Isolation GAte TEchnology) which solves major problems associated with shallow-trench-isolation (STI) and n/sup +//p/sup +/ dual workfunction gate technology. These achievements are realized without increasing process complexity or cost. Furthermore, the process window for planarization is enlarged leading to a robust, submicron n/sup +//p/sup +/ gate STI-CMOS process ideally suited for low-voltage CMOS applications.