Broadband GaN Dual-Gate HEMT Low Noise Amplifier

Abstract

This paper presents a broadband low noise amplifier MMIC utilizing 0.2 urn AlGaN/GaN HEMT technology. The single-stage, resistive feedback amplifier is designed in co-planar waveguide (CPW) topology. It uses dual-gate devices with on-chip drain bias network to achieve 18 dB flat gain between 300 MHz -4 GHz. Measured noise figure is around 1.5 dB between 2 and 5 GHz, and better than 2 dB between 1 and 2 GHz. The amplifier is capable of 25 dBm saturated output power with 1 dB compression point around 20 dBm across the band. Due to high breakdown voltage of GaN devices, the LNA can withstand high input power and shows no sign of degradation.