Improved strained HEMT characteristics using double-heterojunction In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As design

Abstract

The DC and microwave properties of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 052/Al/sub 0.48/As HEMTs (high electron-mobility transistors) with double-heterojunction design are presented. The high sheet carrier density and good carrier confinement give rise to excellent device performance with very low output conductance. For 1*150- mu m/sup 2/ long-gate HEMTs, the measured cutoff frequency f/sub T/ and maximum frequency of oscillation f/sub max/ are as high as 37 and 66 GHz, respectively.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>