Room-Temperature Operation of Buffer-Free GaSb–AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 $\mu$m

Abstract

Buffer-free growth of GaSb on GaAs using interfacial misfit (IMF) layers may significantly improve the performance of antimonide-based emitters operating between 1.6 and 3 mum by integrating III-As and III-Sb materials. Using the IMF, we are able to demonstrate a GaSb-AlGaSb quantum-well laser grown on a GaAs substrate and emitting at 1.65 mum, the longest known operating wavelength for this type of device. The device operates in the pulsed mode at room temperature and shows 15-mW peak power at -10degC and shows high characteristic temperature (T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">o</sub> ) for an Sb-based active region. Further improvements to IMF formation can lead to high-performance lasers operating up to 3 mum.