Multiple-Ramp Column-Parallel ADC Architectures for CMOS Image Sensors

Martijn F. Snoeij, Albert Theuwissen, Kofi A. A. Makinwa, Johan H. Huijsing

IEEE Journal of Solid-State Circuits · 2007 · 152 citations · 14 references

Concepts

Abstract

This paper presents a CMOS imager with a column-parallel ADC architecture based on a multiple-ramp single-slope (MRSS) ADC. Like the well-known column-level single-slope ADC, an MRSS ADC uses a very simple analog column circuit, which mainly consists of an analog comparator and some switches. A prototype imager using the MRSS ADC architecture was realized in a 0.25 CMOS process. Measurements demonstrate that the conversion speed of an MRSS ADC is 3.3 higher than a single-slope ADC while dissipating only 16% more power. Furthermore, the MRSS ADC can be easily adapted to exhibit a companding characteristic, which exploits the amplitude-dependent nature of the photon shot noise present in imager signals. Measurements show that the resulting multiple-ramp multiple-slope ADC is 25% faster than an MRSS ADC while dissipating the same amount of power.

References

14