Dynamic Turn-On Mechanism of the n-MOSFET Under High-Current Stress

Abstract

In this letter, the dynamic turn-on mechanism of the n-MOSFET under high-current-stress event is investigated by using a real-time current and voltage measurement. Results reveal the existence of ldquoself-consistent effect,rdquo i.e., the turn-on region of the parasitic n-p-n bipolar can change from one region to another region and increases with the stress current (ID). Furthermore, experimental data show that the minimum substrate potential to sustain a stable snapback phenomenon is 0.9 V and increases with ID instead of 0.6-0.8 V and independent of ID as reported in early literatures.