Growth of GaSb and InSb by low-pressure plasma MOVPE

A photoluminescence and Hall-effect study of GaSb grown by molecular-beam epitaxy

M. Lee, D. J. Nicholas, K.E. Singer et al. · Journal of Applied Physics · 1986 · 159 citations

Engineering, Materials Science, Physics +17

Growth of InSb and InAs1 − x Sb x by OM‐CVD

P.K. Chiang, S. M. Bedair · Journal of The Electrochemical Society · 1984 · 76 citations

Engineering, Materials Engineering, Materials Science +16

Room-temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy

H. K. Choi, Stephen Eglash · Applied Physics Letters · 1991 · 67 citations

Engineering, Electrical Engineering, Optoelectronics +16

High-mobility InSb grown by organometallic vapor phase epitaxy

D. Kurt Gaskill, Gregory T. Stauf, N. Bottka · Applied Physics Letters · 1991 · 62 citations

Engineering, Materials Engineering, Materials Science +17

Use of atomic layer epitaxy buffer for the growth of InSb on GaAs by molecular beam epitaxy

P. E. Thompson, J. L. Davis, James Waterman et al. · Journal of Applied Physics · 1991 · 58 citations

Natural Sciences, Electrical Engineering, Materials Science +17