Experiments on hot electron noise in semiconductor materials for high-speed devices

Abstract

Experimental results on noise temperature and spectral density of current fluctuations (electron diffusion) at high electric fields in silicon, gallium arsenide, and indium phosphide are presented. The dominant noise sources are discussed in their relation to electron scattering mechanisms. Physical backgrounds of high speed-low noise performance (noise-speed tradeoff) are considered. Suppression in short samples of the fluctuations having long correlation time constant and (or) high threshold energy is discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>