2008 · 18 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesIii-v SemiconductorsSemiconductor HeterostructuresWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown VoltageDeep EtchingEpitaxial Film GrowthEtchingHigh-voltage BreakdownJunction ResistanceParallel Structure
600 V class superjunction (SJ) MOSFETs fabricated by deep-trench etching and epitaxial growth method are experimentally investigated. Planar SJ MOSFETs with both parallel and orthogonal gate structures are fabricated. The SJ MOSFET with parallel gate structure exhibits an improved specific on-resistance of 17 mOmegaldrcm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which is about 30% lower than that of orthogonal gate structures with the same breakdown voltage of 650 V.
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A new generation of high voltage MOSFETs breaks the limit line of silicon
Gerald Deboy, N. Marz, Josef Štengl et al. · 2002 · 402 citations
Engineering, Electrical Engineering, Electronic Materials +13
200V multi RESURF trench MOSFET (MR-TMOS)
T. Kurosaki, Hideaki Shishido, Masahiro Kitada et al. · 2004 · 30 citations