The formation mechanism of planar defects in compound semiconductors grown epitaxially on {100} silicon substrates

Calculation of critical layer thickness versus lattice mismatch for Ge<i>x</i>Si1−<i>x</i>/Si strained-layer heterostructures

R. People, J. C. Bean · Applied Physics Letters · 1985 · 1.7K citations

Natural Sciences, Materials Engineering, Materials Science +17

One-dimensional dislocations. I. Static theory

F. C. Frank, J. H. van der Merwe · Proceedings of the Royal Society of London A Mathematical and Physical Sciences · 1949 · 1.5K citations

Natural Sciences, Materials Science, Physics +15

Rate equation approaches to thin film nucleation kinetics

J. A. Venables · Philosophical magazine · 1973 · 669 citations

Natural Sciences, Chemistry, Physics +16

Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds

J. W. Matthews, Sebastian Mäder, T. B. Light · Journal of Applied Physics · 1970 · 592 citations

Natural Sciences, Materials Science, Physics +17

Generation of misfit dislocations in semiconductors

P. M. J. Marée, J. C. Barbour, J. F. van der Veen et al. · Journal of Applied Physics · 1987 · 474 citations

Natural Sciences, Materials Engineering, Materials Science +17