IEEE Transactions on Nuclear Science · 2008 · 37 citations · 13 references
EngineeringComputer EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice ReliabilityDevice SimulationRadiation Damage In MaterialsSemiconductor ReliabilityHeavy Ion RadiationHeavy-ion ReactionsPower Electronics DevicesPower MosfetsRadiation EffectsRadiation Effects On ReliabilityRadiation-tolerant Semiconductor DevicesSingle Event Upset Modeling
This paper presents a validation of the methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards single-event burnout. This is done thanks to high-energy heavy ion testing and device simulations.
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