IEEE Electron Device Letters · 2003 · 78 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor DevicesChemical Vapor DepositionOptoelectronic DevicesOptoelectronic MaterialsPhotodetectorsSemiconductor Device MaterialsUltraviolet DetectorsHeterostructure OptoelectronicsPhotodetectionPhotodetector MaterialsSilicon PhotodetectorsSilicon PhotodiodesUltraviolet Detector TechnologyUltraviolet PhotodetectorsUltraviolet-visible Detection
A visible-blind ultraviolet (UV) photodetector (PD) with metal-semiconductor-metal (MSM) structure has been developed on a cubic-crystalline SiCN film. The cubic-crystalline SiCN film was deposited on Si substrate with rapid thermal chemical vapor deposition (RTCVD). The optoelectron performances of the SiCN-MSM PD have been examined by the measurement of photo and dark currents and the currents' ratio under various operating temperatures. The current ratio for 254-nm UV light of the detector is about 6.5 at room temperature and 2.3 at 200/spl deg/C, respectively. The results are better than the counterpart /spl beta/-SiC of 5.4 at room temperature, and less than 2 for above 100/spl deg/C, thus offering potential applications for low-cost and high-temperature UV detection.
7
Semiconductor ultraviolet detectors
Manijeh Razeghi, Antoni Rogalski · Journal of Applied Physics · 1996 · 1.5K citations
Crystalline silicon carbon nitride: A wide band gap semiconductor
Li–Chyong Chen, C. K. Chen, Shih‐Chun Wei et al. · Applied Physics Letters · 1998 · 165 citations
Natural Sciences, Materials Engineering, Materials Science +17