IEEE Journal of Quantum Electronics · 2011 · 47 citations · 18 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsDetector TechnologyInfrared DetectorsInfrared Optical MaterialsPhotodetectorsSemiconductor DetectorsWide Band Gap SemiconductorsInfrared PhotodetectorsLinewidth NarrowingPhotodetectionPhotodetector MaterialsPhotoluminescenceSemiconductor Infrared MaterialsSuperlatticesX-ray Diffraction Analysis
We report on long wavelength infrared photodetectors using InAs/GaSb superlattices (SLs) with InSb-like and mixed interfaces (IFs). X-ray diffraction (XRD) measurements indicate that the SLs with mixed IFs have a narrower linewidth. The full-width at half-maximum of the XRD satellite peak is 24 arcsec for the sample with InSb-like IFs and is only 17 arcsec for the sample with mixed IFs. However, in terms of infrared photodetection, InSb-like IFs are superior to the mixed ones. Stronger photoluminescence and photoresponse signals are observed for the sample with InSb-like IFs.
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