High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

Xianshu Luo, Yulian Cao, Junfeng Song, +9

Frontiers in Materials

Optical MaterialsEngineeringDevice IntegrationOptoelectronic Integrated CircuitsIntegrated Circuits +16

Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors With InSb-Like and Mixed Interfaces

Yanhua Zhang, Wenquan Ma, Yulian Cao, +4

IEEE Journal of Quantum Electronics

PhotonicsElectrical EngineeringShort Wavelength OpticEngineeringPhotoluminescence +12

“Signal-on” SERS sensing platform for highly sensitive and selective Pb2+ detection based on catalytic hairpin assembly

Yan Wu, Cuicui Fu, Jie Xiang, +5

Analytica Chimica Acta

Selective Pb2+ DetectionEngineeringBiosensing SystemsSensorsCatalytic Hairpin Assembly +6

How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2–3 $\mu{\rm m}$

Jianliang Huang, Wenquan Ma, Yang Wei, +5

IEEE Journal of Quantum Electronics

Short Wavelength OpticEngineeringLaser ApplicationsLuminescence PropertyReach Detection Wavelength +14

High Structural Quality of Type II InAs/GaSb Superlattices for Very Long Wavelength Infrared Detection by Interface Control

Yang Wei, Wenquan Ma, Yanhua Zhang, +3

IEEE Journal of Quantum Electronics

Materials SciencePhotonicsIi-vi SemiconductorShort Wavelength OpticEngineering +12

The Progress and Trend of Heterogeneous Integration Silicon/III-V Semiconductor Optical Amplifiers

Wenqi Shi, Canwen Zou, Yulian Cao, +1

Photonics

PhotonicsElectrical EngineeringOptical InterconnectsEngineeringIntegrated Photonics +13

Hybrid III–V/silicon laser with laterally coupled Bragg grating

Yulian Cao, Xiaonan Hu, Xianshu Luo, +8

Optics Express

Silicon WaveguidePhotonicsOptical MaterialsEngineeringLaser Science +12

Temperature-dependent modulation characteristics for 1.3 μm InAs/GaAs quantum dot lasers

Pengfei Xu, Tao Yang, Hai‐Ming Ji, +5

Journal of Applied Physics

Categoryquantum ElectronicsPhotonicsQuantum ScienceQuantum PhotonicsEngineering +13

Dark current characteristics of GaAs-based 2.6 <i>µ</i>m InGaAs photodetectors on different types of InAlAs buffer layers

L. P. Zhou, Yonggang Zhang, X. Y. Chen, +4

Journal of Physics D Applied Physics

SemiconductorsPhotonicsElectrical EngineeringDark Current CharacteristicsGaas-based 2.6 +13

Mid Wavelength Type II InAs/GaSb Superlattice Photodetector Using SiO_xN_y Passivation

Jianliang Huang, Wenquan Ma, Yulian Cao, +5

Japanese Journal of Applied Physics

SemiconductorsPhotonicsElectrical EngineeringOptical MaterialsEngineering +13