IEEE Photonics Technology Letters · 1994 · 43 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesLaser PhysicsQuantum Well DevicesSemiconductor Device MaterialsSemiconductor LasersWide Band Gap SemiconductorsEpitaxial Film GrowthHigh-temperature Device OperationLaser MaterialsPeak GainQuantum Well GainQuantum Well LasersQuantum Well StatesVertical-cavity Surface-emitting Lasers
Modifications to the epitaxial growth of vertical-cavity surface-emitting laser (VCSEL) material have recently led to improved characteristics. By offsetting the quantum-well gain peak from the cavity mode, and implementing lower barrier p-type Al/sub 0.67/Ga/sub 0.33/As/GaAs DBR mirrors with parabolic interface gradings, better high-temperature operation and lower voltages have been achieved. These effects combine to yield a peak wall plug efficiency of 17.3% for room temperature, CW operation.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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