Heavy-Ion SEE Test Concept and Results for DDR-II Memories

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> In order to investigate heavy ion single event effects (SEEs) in advanced commercial DDR-II SDRAM memories, a large number of practical problems need to be addressed ranging from test approach, sample preparation, error analysis, physical error identifications and effective LET corrections before test results can be presented. This paper continues where Harboe-SØrensen <etal/>, 2003, ended with further details on most of the critical steps mentioned above. Additionally, the first set of SEE data will be presented and discussed covering Samsung, Infineon, Micron, and Elpida 512 M-bit DDR-II memory devices. </para>