Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 $\mu$m

Abstract

An InP-based p-i-n photodiode with optical response out to 3.4 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula> was designed and grown by molecular beam epitaxy (MBE). One hundred pairs of 7-nm <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{In}_{0.34}\hbox{Ga}_{0.66}\hbox{As}$</tex> </formula> /5-nm <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{GaAs}_{0.25}\hbox{Sb}_{0.75}$</tex> </formula> quantum wells strain compensated to InP were used as the absorption region. The device showed a dark current density of 9.6 mA/cm <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$^{2}$</tex></formula> under <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$-$</tex></formula> 0.5-V reverse bias, a responsivity of 0.03 A/W, and a detectivity of <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$2.0\times 10^{8}\ \hbox{cm}\cdot\hbox{Hz}^{1/2}\cdot\hbox{W}^{-1}$</tex></formula> at 3 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\mu\hbox{m}$</tex> </formula> at 290 K. <?Pub _bookmark="" Command="[Quick Mark]"?>