IEEE Photonics Technology Letters · 2005 · 72 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptical Properties Of SemiconductorsPhotodetectorsQuantum Well DevicesQuantum WellsSemiconductor DetectorsSemiconductor Device MaterialsExternal Quantum EfficiencyOptical Absorption In Quantum WellsOptical Gain In SemiconductorsQuantum EfficiencyQuantum Well HeterostructuresQuantum Well PhotodetectorsQuantum Well StructuresType-ii Quantum Wells
We report a photodiode on InP substrate with a cutoff wavelength of 2.39 μm and peak room-temperature external quantum efficiency of 43% at 2.23 μm. Type-II GaInAs-GaAsSb quantum wells lattice-matched to InP were placed in the absorption region for long wavelength absorption. The device showed a peak detectivity of 5.6×10/sup 10/ cm/spl radic/HzW/sup -1/ at 200 K.
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