Influence of Growth Conditions on Phase Separation of InGaN Bulk Material Grown by MOCVD

Solid phase immiscibility in GaInN

I. H. Ho, G. B. Stringfellow · Applied Physics Letters · 1996 · 1K citations

Natural Sciences, Materials Science, Physics +17

Origin of Luminescence from InGaN Diodes

K.P. O’Donnell, Robert Martin, P. G. Middleton · Physical Review Letters · 1999 · 490 citations

Natural Sciences, Materials Engineering, Materials Science +17

Structure and formation mechanism of V defects in multiple InGaN∕GaN quantum well layers

Makoto Shiojiri, Chang‐Cheng Chuo, J. T. Hsu et al. · Journal of Applied Physics · 2006 · 138 citations

Natural Sciences, Materials Science, Physics +17

Spontaneous Formation of Indium-Rich Nanostructures on InGaN(0001) Surfaces

Huajie Chen, R. M. Feenstra, John E. Northrup et al. · Physical Review Letters · 2000 · 118 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots

Il-Kyu Park, Min‐Ki Kwon, Seong‐Ho Baek et al. · Applied Physics Letters · 2005 · 63 citations

Natural Sciences, Materials Engineering, Materials Science +17