IEEE Transactions on Electron Devices · 2006 · 103 citations · 68 references
EngineeringElectrical EngineeringPhysicsMicroelectronicsNanotechnologySemiconductor DevicesCarrier TransportDevice ModelingHigh-frequency Semiconductor DevicesNanoelectronicsNoise In Semiconductor DevicesSemiconductor PhysicsAnalytical SolutionsCompact ModelingCurrent ContinuityElectrostatic ModelingGate-all-around TransistorsMosfet ModelingSemiconductor Device ModelingTransport Mechanisms
Compact-modeling principles and solutions for nanoscale double-gate and gate-all-around MOSFETs are explained. The main challenges of compact modeling for these devices are addressed, and different approaches for describing the electrostatics, the transport mechanisms, and the high-frequency behavior are explained. Several approximations used to derive analytical solutions of Poisson's equation for doped and undoped devices are discussed, and the need for self-consistency with Schrodinger's equation and with the current continuity equation resulting from the transport models is addressed. Several techniques to extend the compact modeling to the high-frequency regime and to study the RF performance, including noise, are presented and discussed
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Noise modeling for RF CMOS circuit simulation
A.J. Scholten, L.F. Tiemeijer, R. van Langevelde et al. · IEEE Transactions on Electron Devices · 2003 · 379 citations